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Laser-assisted doping combined with annealing technique is used in selective areas to form a p-n junction on a SiC thin film grown by the pulsed laser deposition on a Si substrate at a temperature of 800 °C. This approach in an aluminum chloride solution and a phosphoric solution has resulted in p-SiC/n-Si and n-SiC/p-Si hetero-structures, respectively. Further, a functional in-plane p-n junction is realized side-by-side on the post-deposited SiC thin film. I-V characteristics by two probe technique showed the p-n diode characteristics. Blue light (400 nm) electroluminescence from the p-n junction on SiC thin film was observed in the forward biased condition. Further, an improvement in the I-V reverse characteristics was observed by illuminating the p-n SiC thin film with green/blue light.

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Laser-assisted doping of intrinsic silicon carbide (SiC) films deposited on Si (100) substrates by pulsed laser deposition (PLD) method and its influence on simultaneous annealing of the thin film is studied. PLD grown intrinsic SiC films are transformed to p-type SiC and n-type SiC, using laser-assisted doping in aqueous aluminum chloride and phosphoric solutions, respectively. Simultaneous doping and annealing of the SiC film are observed during laser-assisted doping. By precisely positioning the selectively doped region, lateral p–n diodes are formed on the SiC films without using any mask. Electric characteristics confirmed the formation of a lateral p–n diode structure. Numerical analysis of temperature distribution along the depth of the SiC films explains the mechanism of simultaneous doping and annealing during the laser treatment.

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