Abstract-In this paper, benchmark of Si IGBT, SiC MOSFET, 5 and Gallium nitride (GaN) HEMT power switches at 600-V class 6 is conducted in single-phase T-type inverter. Gate driver require-

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(2016) Performance evaluation of a 3-level ANPC photovoltaic grid-connected inverter with 650V SiC devices and optimized PWM. IEEE Transactions on Industry Applications, 52 (2). pp. 2475 -2485 . ISSN 1939 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/33387/1/Performance%20Evaluation%20of%20a%203-Level %20ANPC%20Photovoltaic%20Grid-Connected%20Inverter%20with%20650V%20SiC %20Devices%20and%20Optimized%20PWM.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the University of Nottingham End User licence and may be reused according to the conditions of the licence. For more details see: http://eprints.nottingham.ac.uk/end_user_agreement.pdf A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract-Photovoltaic (PV) energy conversion has been on the spotlight of scientific research on renewable energy for several years. In recent years the bulk of the research on PV has focused on transformerless grid-connected inverters, more efficient than traditional line transformer-based ones, but more critical from a power quality point of view, especially in terms of ground leakage current. Neutral point clamped (NPC) inverters have recently gained interest due to their intrinsically low ground leakage current and high efficiency, especially for MOSFET-based topologies. This paper presents an active NPC (ANPC) topology equipped with 650 V SiC MOSFETs, with a new modulation strategy that allows to reap the benefits of the wide-bandgap devices. An efficiency improvement is obtained due to the parallel operation of two devices during the freewheeling intervals. Simulations and experimental results confirm the effectiveness of the proposed converter.

Abstract-In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3L-ANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Commonmode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.Index Terms-Wide bandgap (WBG) power devices, galliumnitride (GaN), HEMT, three-level active neutral point clamped (3L-ANPC) converter, photovoltaic (PV) systems, stray inductance.