Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs and GaN HEMTs

Gurpinar, Emre; Castellazzi, Alberto

doi:10.1109/tpel.2015.2506400

Cited by 187 publications

(101 citation statements)

References 38 publications

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“…Practical implementation issues of the AT-NPC inverters using advanced WBG power semiconductor devices have got attentions in recent years [22] [23]. There still left many design and implementation issues for the integrated design and control of the AT-NPC inverters with innovative power semiconductor devices and advanced SOPC control technologies.…”

Section: Implementation and Experimental Resultsmentioning

confidence: 99%

Design and Implementation of a Three-Phase Active T-Type NPC Inverter for Low-Voltage Microgrids

Chen¹,

Tzou²

2017

EPE

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This paper presents the design and implementation of a 3 kVA three-phase active T-type neutral-point clamped (NPC) inverter with GaN power devices for low-voltage microgrids. The designed inverter is used in a battery-based energy system (BESS) for power conversion optimization in applications to low-voltage microgrids. A modular design method has been developed for the design and implementation of the AT-NPC inverter. Experimental verification has been carried out based on a 3-kW three-phase T-Type NPC gridconnected inverter. FPGA based digital control technique has been developed for the current control of the three-level three-phase grid inverter. A maximum efficiency of 98.49% has been achieved within a load range from 50% to 75%.

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Section: Implementation and Experimental Resultsmentioning

confidence: 99%

Design and Implementation of a Three-Phase Active T-Type NPC Inverter for Low-Voltage Microgrids

Chen¹,

Tzou²

2017

EPE

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“…Similarly, the iS1 is constant and vGS_S1 is linearly changed within ton2. The turn-on loss of S1 Pon_S1 can be deduced form Equation (6).…”

Section: Low Side Mosfet Lossmentioning

confidence: 99%

Analysis of Power Loss and Improved Simulation Method of a High Frequency Dual-Buck Full-Bridge Inverter

et al. 2017

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Abstract:A high frequency dual-buck full-bridge inverter for small power renewable energy application is proposed in this paper. A switching frequency of 400 kHz is achieved with the adoption of the SiC power device. A two-pole two-zero (2P2Z) compensator is employed in the outer voltage loop to generate the current reference for inner current loop. A 3P3Z compensator is adopted in the inner current loop to track the current reference. A systematic way for calculating the losses of high frequency inverter is presented, and the losses of the components are thoroughly analyzed. The turn-on and turn-off procedures of the inverter are discussed in detail. The losses caused by high frequency are calculated accurately, and the loss distribution is established as well. The procedure of the loss analysis gives a practical example for calculating the loss of similar type inverters. Moreover, deviation between pulse width modulation (PWM) control signal and switching response in high frequency switching is thoroughly analyzed. The influence of deviation is verified by designed experiment. Hence, a compensation method is proposed in order to minimize the influence. The compensation effect is validated by experiment and simulation. Finally, a 1-kW prototype is built to verify the feasibility of the theoretical analyses. The grid-connected maximum output power experiment is completed at 1 kW with the efficiency of 96.1% and the total harmonic distortion (THD) of 1.8%. The comparison experiments of power loss between Si and SiC power devices are carried out. The experiment results confirm the loss calculation method to be valid.

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“…Without considering thermal benefits of reduced converter losses, if the feed-in tariff is assumed to be the same as the utility tariff, it can be concluded that the GaN HEMT-based inverter at 10 kHz will bring additional e 30.73 to the owner in comparison with the Si IGBT-based inverter. At 300 kHz, the GaN HEMT-based inverter will not bring significant operation income to the owner, whereas will provide reduction in initial system cost saving due to the reduction in cooling and output filtering requirements [20].…”

Section: A Overall Power Loss and Energy Generationmentioning

confidence: 99%

“…Furthermore, the same devices have been used in other applications, such as resonant L LC dc/dc converters, three-phase inverters, and synchronous buck converters. Those cases have shown the high switching and conduction performance of the GaN HEMT devices in different operating conditions [16]- [20]. Specifically, in [17], GaN devices are demonstrated on a three-phase inverter with 99.3% efficiency at 900-W output power and 16-kHz switching frequency.…”

mentioning

confidence: 95%

“…Specifically, in [17], GaN devices are demonstrated on a three-phase inverter with 99.3% efficiency at 900-W output power and 16-kHz switching frequency. Finally, GaN HEMTs are demonstrated along with 1200 V SiC MOSFETs in single-phase PV applications in [19] and [20], where the converter has achieved 99.2% peak efficiency at 1.4-kW output power and 16-kHz switching frequency. The presented converter proves the stable operation of WBG devices under wide load, switching frequency, and ambient temperature conditions.…”

mentioning

confidence: 99%

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Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

Gurpinar

Yang

Iannuzzo

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs and GaN HEMTs

Abstract: Abstract-In this paper, benchmark of Si IGBT, SiC MOSFET, 5 and Gallium nitride (GaN) HEMT power switches at 600-V class 6 is conducted in single-phase T-type inverter. Gate driver require-

Cited by 187 publications

References 38 publications

Design and Implementation of a Three-Phase Active T-Type NPC Inverter for Low-Voltage Microgrids

Design and Implementation of a Three-Phase Active T-Type NPC Inverter for Low-Voltage Microgrids

Analysis of Power Loss and Improved Simulation Method of a High Frequency Dual-Buck Full-Bridge Inverter

Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

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