Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

Gurpinar, Emre; Yang, Yongheng; Iannuzzo, Francesco; Castellazzi, Alberto; Blaabjerg, Frede

doi:10.1109/jestpe.2016.2566259

Cited by 33 publications

(19 citation statements)

References 35 publications

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“…From that same perspective, this paper reports on the learning done in recent years in some representative applications selected from the renewable energy applications domain (PV and wind). The findings clearly indicate that significant incremental benefits (not disruptive) can be drawn from WBG technology already as a drop-in replacement for Si, even with conventional standardized packaging solutions [1][2][3][4][5][6]. The higher initial price of the semiconductors is counter-balanced by savings in the filter elements and cooling, as well as by the possibility to do without free-wheeling diodes even in higher-voltage applications.…”

Section: Introductionmentioning

confidence: 94%

“…Because of the current and voltage rating involved, 650 V discrete transistors in the TO247 package were chosen for the main switches. This enabled a straightforward benchmark within the same exact power cell design with all available technologies [3][4][5], including Si IGBTs, SiC MOSFETs, and GaN HEMTs (gate injection type, GIT). The highest performance was achieved with GaN, with a small margin over SiC mainly because of the smaller parasitic capacitances and better switching, whereas both GaN and SiC decidedly outperformed Si.…”

Section: Inverter Performance and Power Density Trade-offmentioning

confidence: 99%

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Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

et al. 2019

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Wide-bandgap (WBG) semiconductor devices are making their way into large-volume applications, including pivotal domains of societal infrastructure such as sustainable energy generation and conversion. Presented for a long time mainly as a synonym of high-temperature electronics, hands-on experience has highlighted a number of gains that can be drawn from this technology even when used as a straightforward drop-in substitute of silicon in established applications and field-proven designs. Incremental in nature, these gains enable interesting progress beyond state-of-the-art forms, which, though not corresponding to the full exploitation of the potential of this technology, are oftentimes sufficient to justify its adoption. With particular reference to renewable energy power conversion and solid-state transformation, in the context of transport applications and incorporating a storage device, this paper reports on the understanding generated over the past few years and points out some specifically tailored technology and circuit design requirements to ensure overall beneficial impact of the adoption of WBG technology.

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Section: Introductionmentioning

confidence: 94%

Section: Inverter Performance and Power Density Trade-offmentioning

confidence: 99%

Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

et al. 2019

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“…Recently wide-band gap devices in dc/dc converters and dc/ac inverters have been widely introduced. Various converters with different application conditions show the potential of achieving very high efficiencies with WBG devices under a wide operating range [20]. This makes WBG devices favourable for most applications, consequently making monitoring the health of the devices a very important aspect of operation.…”

Section: Measuring Structure Functions In Multilevelinvertersmentioning

confidence: 99%

Measuring structure functions of power devices in inverters

Aliyu

Castellazzi

2017

Microelectronics Reliability

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“…Application and implementation challenges and benefits of GaN devices in high density power converters are discussed in [8] and [9]. Finally, reliability-driven assessment of GaN HEMT and Si IGBT devices in PV systems is discussed in [10].…”

Section: Introductionmentioning

confidence: 99%

Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter

Gurpinar

Iannuzzo

Yang

et al. 2018

IEEE Trans. on Ind. Applicat.

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Abstract-In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3L-ANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Commonmode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.Index Terms-Wide bandgap (WBG) power devices, galliumnitride (GaN), HEMT, three-level active neutral point clamped (3L-ANPC) converter, photovoltaic (PV) systems, stray inductance.

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Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

Cited by 33 publications

References 35 publications

Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

Measuring structure functions of power devices in inverters

Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter

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