The performance improvements for integrated circuit applications of silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) implemented with diamond layout style (hexagonal gate geometry) are quantified, thanks to the longitudinal corner effect and parallel association of MOSFETs with different channel lengths effect contributions. Futhermore, an accurate analytical drain current model for planar diamond SOI MOSFET for micrometre scale effective channel lengths is proposed and validated. The concept is then extended by 3D simulations for the 150 nm node fully-depleted SOI n-channel MOSFETs.Introduction: Nowadays, silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology is broadly used to manufacture commercial mixed integrated circuits (ICs) for low-power lowvoltage purposes, and numerous new devices have been studied to improve the electrical performance of analogue and digital ICs [1,2].Considering planar CMOS, the diamond layout style (Fig. 1a) is an alternative device for use in analogue IC applications, to significantly enhance the metal-oxide semiconductor field-effect transistors' (MOSFETs') electrical performance, only by layout change, without causing any extra burden to the CMOS manufacturing process used [3,4].

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combined toluene extracts were dried over anhydrous MgSO, and the solvent was evaporated on an efficient rotary evaporator keeping the bath temperature below 40 "C. The resulting viscous oil was washed with a few milliliters of n-pentane to afford the sulfamyloxaziridines lb. The purity and diastereomer ratios were determined by NMR and melting point. Acknowledgment. This work was supported by the National Science Foundation (CHE 8502076). Note added in proof:We have observed that Oxone that has been exposed to moisture for several months gives reduced reactivity in the oxidations described here. ( i ) -l b (Z = (PhCH,),N, Ar = 2-C1,5-N02Ph), 113625-70-0; (R,-(S,S)-lb (Z = (S)-PhCH(CH,)PhCH,N, Ar = 3-NO2Ph), 108266-24-6; (R,R)-lb (Z = (S)-PhCH(CH,)PhCH,N, Ar = 2-Ar = 2-C1,5-NO2Ph), 89556-80-9; (R,R)-lb (Z = (S)-PhCH-(CH3)PhCH2N, Ar = C6F5), 108167-42-6; (S,S)-lb (Z = ( S ) -PhCH(CH3)PhCH2N, Ar = CBF5), 108391-91-9; 2a (Z = Ph, Ar = Ph), 13909-34-7; 2a (Z = Ph, Ar = 2-NO2Ph), 113567-60-5; 2a (Z = Ph, Ar = 3-NO2Ph), 52962-76-2; 2a (Z = Ph, Ar = 4-NO2Ph), 36176-89-3; 2a (Z = Ph, Ar = 2-C1,5-NO2Ph), 108167-37-9; 2b (Z = 10-camphoryl, Ar = 2-C1,5-NO2Ph), 82679-82-1; 2b (Z = (PhCH2)2N, Ar = 2-C1,5-NO2Ph), 108167-36-8; 2b (2 = (S)-PhCH(CH3)PhCH2N, Ar = 2-C1,5-NO2Ph), 89556-76-3; 2b (Z = (S)-PhCH(CH,)PhCH,N, Ar = C6F5), 108167-35-7; Oxone, R)-lb (Z = (S)-PhCH(CH,)PhCH,N, Ar = 3-NO,Ph), 108167-380; Cl,B-N02Ph), 89616-61-5; (S,S)-lb (Z = (S)-PhCH(CH,)PhCH,N, 37222-66-5.