Nowadays most overlay metrology tools assess the overlay performance based on marker features which are deposited next to the functional device features within each layer of the semiconductor device. However, correct overlay of the relatively coarse marker features does not directly guarantee correct overlay of the much smaller device features. This paper presents the development of a tool that allows to measure the relative distance between the marker and device features within each layer of the semiconductor device, which can be used to improve the overlay at device feature level. In order to be effective, the marker to device feature distance should be measured with sub-nanometer measurement uncertainty over several millimeters range. Furthermore, the tool should be capable of profiling the marker features to allows prediction of the location interpretation of the optical diffraction based alignment sensors, which are sensitive for potential asymmetry of the marker features. To enable this, a highly stable Atomic Force Microscope system is being developed. The probe is positioned relative to the wafer with a 6DOF controlled hexapod stage, which has a relatively large positioning range of 8x8mm. The position and orientation of this stage is measured relative to the wafer using 6 interferometers via a highly stable metrology frame. A tilted probe concept is utilized to allow profiling of the high aspect ratio marker and device features. Current activities are aimed at demonstrating the measurement capabilities of the developed AFM system.

Entanglement distribution over quantum networks has the promise of realizing fundamentally new technologies. Entanglement between separated quantum processing nodes has been achieved on several experimental platforms in the past decade. To move towards metropolitan-scale quantum network test beds, the creation and transmission of indistinguishable single photons over existing telecom infrastructure is key. Here we report the interference of photons emitted by remote, spectrally detuned NV center-based network nodes, using quantum frequency conversion to the telecom L-band. We find a visibility of 0.79 ± 0.03 and an indistinguishability between converted NV photons around 0.9 over the full range of the emission duration, confirming the removal of the spectral information present. Our approach implements fully separated and independent control over the nodes, time-multiplexing of control and quantum signals, and active feedback to stabilize the output frequency. Our results demonstrate a working principle that can be readily employed on other platforms and shows a clear path towards generating metropolitan scale, solid-state entanglement over deployed telecom fibers.

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In lithography, overlay control is getting increasingly complex. Advanced Process Control (APC) is introduced to minimize excursions from the process window for the present exposure. APC uses metrology data of previously exposed wafers, hence, there is always a delay of tens of minutes before the required information is available. This paper proposes the combination of a patterned expose beam and a patterned fluorescent marker on a wafer to generate a fluorescent signal that carries real-time information of the focus and/or position error of the expose pattern with the pattern on the wafer. A practical realization requires some changes to the exposure process, stepper design and reticle lay-out. Firstly, a matched pair of markers on the wafer and reticle is required. Secondly, the generated fluorescent signal must be measured, for example with a (spectrally filtered) photon counter close to the expose area of the wafer. At last, the markers from the previous lithography step shall, after development, be filled with fluorescent material. This deposition requires an additional process step. Photon budget calculations suggest an overlay measurement accuracy of less than a tenth of a nm (real-time).

In this paper, we present a novel single stage quantum frequency conversion (QFC) scheme based on an enhancement cavity, which allows for high conversion efficiencies with record low noise levels, 100 times smaller than in previous systems and close to the thermal background. Our approach represents a significant improvement over traditional QFC methods that rely on periodically poled waveguide crystals, which typically produce high levels of noise with input wavelengths in the visible spectrum. One of the key challenges in QFC is the generation of noise photons - photons that are not part of the desired output state. Those noise photons are one of the major limitations of today’s quantum network experiments. It has been widely believed that single stage QFC of qubit photons in the visible range would result in too many noise photons in the telecom band, because of SPDC induced by the short wavelength driver laser. However, using the enhancement cavity design, we are able to overcome this challenge and demonstrate high-fidelity QFC from the visible to telecom band. Our results have important implications for the development of practical QFC devices for a range of applications, including quantum communication and quantum networks, where low noise levels are critical.