The macrophage-mediated inflammatory response is a key etiologic component of obesity-related tissue inflammation and insulin resistance. The transcriptional factor FoxO1 is a key regulator of cell metabolism, cell cycle and cell death. Its activity is tightly regulated by the phosphoinositide-3-kinase-AKT (PI3K-Akt) pathway, which leads to phosphorylation, cytoplasmic retention and inactivation of FoxO1. Here, we show that FoxO1 promotes inflammation by enhancing Tlr4-mediated signalling in mature macrophages. By means of chromatin immunoprecipitation (ChIP) combined with massively parallel sequencing (ChIP-Seq), we show that FoxO1 binds to multiple enhancer-like elements within the Tlr4 gene itself, as well as to sites in a number of Tlr4 signalling pathway genes. While FoxO1 potentiates Tlr4 signalling, activation of the latter induces AKT and subsequently inactivates FoxO1, establishing a self-limiting mechanism of inflammation. Given the central role of macrophage Tlr4 in transducing extrinsic proinflammatory signals, the novel functions for FoxO1 in macrophages as a transcriptional regulator of the Tlr4 gene and its inflammatory pathway, highlights FoxO1 as a key molecular adaptor integrating inflammatory responses in the context of obesity and insulin resistance.

The effect of oxygen adsorption on a nanotube-based field effect transistor have been controversial as to whether it induces p-type doping of the nanotube body or the work function increase in the metal electrode. Here we report a transport measurement showing that a long individual single-walled nanotube can be doped as p-type upon oxygen adsorption. We discuss that, despite the fact that the charge transfer between the nanotube and O2 adsorbator has not been agreed to date, the effect of oxygen adsorption should still be interpreted as inducing p-type doping in the nanotube body. The n-type doping by NH3 adsorption is also measured for the purpose of comparison. Based on these observations, we suggest that, while the Schottky barrier management could be more effective for the transistor with a short nanotube, the doping effect could be more influential in devices with longer nanotubes.

We discuss the central issues to be addressed for realizing carbon nanotube (CNT) nanoelectronics. We focus on selective growth, electron energy bandgap engineering and device integration. We have introduced a nanotemplate to control the selective growth, length and diameter of CNTs. Vertically aligned CNTs are synthesized for developing a vertical CNT-field effect transistor (FET). The ohmic contact of the CNT/metal interface is formed by rapid thermal annealing. Diameter control, synthesis of Y-shaped CNTs and surface modification of CNTs open up the possibility for energy bandgap modulation. The concepts of an ultra-high density transistor based on the vertical-CNT array and a nonvolatile memory based on the top gate structure with an oxide–nitride–oxide charge trap are also presented. We suggest that the deposited memory film can be used for the quantum dot storage due to the localized electric field created by a nano scale CNT-electron channel.

We have fabricated a single-wall carbon-nanotube (CNT)-based nonvolatile memory device using SiO2–Si3N4–SiO2 (ONO) layers as a storage node. The memory device is composed of a top gate structure with a channel width of a few nanometers and the ONO layer embedded between CNT and gate electrode. When the bias voltage between the CNT and gate electrode increases to 4 V, charges are tunneled out from CNT surfaces and captured to the traps in the ONO layers. Stored charges on the trap sites make the threshold voltage shift of 60 mV and is independent of charging time, suggesting that the ONO has traps with a quasiquantized energy state. The quantized state is related to the localized high electric field associated with CNT channel. The CNT-field-effect transistor with an ONO storage node could be used for an ultrahigh-density nonvolatile memory.

We investigate ambipolar to unipolar transition by the effect of ambient air on the carbon nanotube field-effect transistor. A unipolar transport property of the double-walled nanotube field-effect transistor and its conversion from ambipolar behavior are observed. We suggest that adsorptions of oxygen molecules, whose lowest-unoccupied-molecular-orbital state is around the midgap of the carbon nanotube, could suppress the electron channel formation and, consequently, result in the unipolar transport behavior.