We report the realization of field-effect transistors (FETs) made with chemically-

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We discuss the central issues to be addressed for realizing carbon nanotube (CNT) nanoelectronics. We focus on selective growth, electron energy bandgap engineering and device integration. We have introduced a nanotemplate to control the selective growth, length and diameter of CNTs. Vertically aligned CNTs are synthesized for developing a vertical CNT-field effect transistor (FET). The ohmic contact of the CNT/metal interface is formed by rapid thermal annealing. Diameter control, synthesis of Y-shaped CNTs and surface modification of CNTs open up the possibility for energy bandgap modulation. The concepts of an ultra-high density transistor based on the vertical-CNT array and a nonvolatile memory based on the top gate structure with an oxide–nitride–oxide charge trap are also presented. We suggest that the deposited memory film can be used for the quantum dot storage due to the localized electric field created by a nano scale CNT-electron channel.

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We have fabricated a single-wall carbon-nanotube (CNT)-based nonvolatile memory device using SiO2–Si3N4–SiO2 (ONO) layers as a storage node. The memory device is composed of a top gate structure with a channel width of a few nanometers and the ONO layer embedded between CNT and gate electrode. When the bias voltage between the CNT and gate electrode increases to 4 V, charges are tunneled out from CNT surfaces and captured to the traps in the ONO layers. Stored charges on the trap sites make the threshold voltage shift of 60 mV and is independent of charging time, suggesting that the ONO has traps with a quasiquantized energy state. The quantized state is related to the localized high electric field associated with CNT channel. The CNT-field-effect transistor with an ONO storage node could be used for an ultrahigh-density nonvolatile memory.