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We have investigated transparent conducting properties of using In-doped (4 at. %) zinc oxide (IZO) thin films deposited on glass substrate by pulsed DC magnetron sputtering at low processing substrate temperatures. As increase of the substrate temperature, IZO thin films with better c-axis orientations were grown in perpendicular to the substrate and work functions of IZO films slightly decrease. The optical properties showed high transmittance of higher than 85% in the UV-visible region and exhibited the absorption edge of about 350 nm. The electrical properties exhibited the low resistivity of 1:1 Â 10 À3 cm and the high mobility of $7:8 cm 2 V À1 s À1 . The organic light emitting diodes (OLEDs) with an IZO anode achieved a maximum luminance efficiency of 2.7 cd/A and external quantum efficiency of 0.47%, which are compared to the values of a control device fabricated on commercial ITO anode. These results indicate that IZO films hold promise for anodic electrodes in the OLEDs application.

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We investigated the effects of deposition plasma power on the properties of plasma polymer films deposited by plasma-enhanced chemical vapor deposition using a mixture of hexamethyldisiloxane and 3,3-dimethyl-1-butene as the precursor, which are referred to as plasma polymerized hexamethyldisiloxane:3,3-dimethyl-1-butene (PPHMDSO:DMB) films. As the deposition plasma power was increased from 15 to 60 W, the relative dielectric constants k of PPHMDSO:DMB films, increased from 2.67 to 3.19. After annealing at 450 °C, the films deposited at a deposition plasma power of 15–60 W showed k values of 2.27–2.64. With increased deposition plasma power, the as-deposited and annealed films showed increased values of hardness and Young's modulus. For as-deposited films, deposited at a plasma power of 15–60 W, the films showed a hardness of 0.13–2.0 GPa, and a modulus of 2.25–17.27 GPa. Annealed films, deposited at a plasma power of 15–60 W, showed a hardness of 0.05–2.07 GPa and a modulus of 1.66–14.4 GPa. The change in the k value and hardness of plasma polymer films as a function of deposition plasma power was correlated with fourier transform infrared (FT-IR) absorption peaks of C–Hx, Si–CH3, and Si–O related groups. The as-deposited and annealed PPHMDSO:DMB films showed decreased intensities of C–Hx and Si–CH3 peaks as the deposition plasma power increased. The reduction in the dielectric constant after annealing is mainly due to hydrocarbon removal in the film. Deconvolution of Si–CH3 bending peaks of PPHMDSO:DMB films was performed to relate mechanical properties to chemical structures. The relative oxygen content in the O–Si–(CH3)x structure is analyzed in detail. Improvements in hardness and modulus of our films are attributed to an increased amount of O3Si–(CH3) in the Si–CH3 structure.

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