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A variety of different photo resists are used for fabrication of MEMS. Presently good results were reported for SU-8, a chemically amplified negative tone photoresist. But SU-8 has a disadvantage for some applications in LIGA technique, especially in the X-ray mask fabrication. After processing the finished resist pattern are hardly soluble from the substrate. This paper will briefly describe the current status of the development of the new negative tone photoresist CAR 44 whose big advantage is the easy removableness of the cross linked pattern.

No abstract