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This paper presents a 40-MHz hybrid CMOS/GaN integrated multiphase dc-dc switched-inductor buck converter with a maximum 20-V input voltage. The half-bridge switches are realized using lateral AlGaN/GaN HEMTs, while the drivers and other circuitry are implemented in standard 180-nm CMOS. The interface between the CMOS and GaN dice is achieved through face-to-face bonding, reducing inductive parasitics for the connection to less than 15 pH. A capacitively coupled level shifter provides the gate drive for the high-side GaN switch using 5-V CMOS devices. The converter demonstrates 76% efficiency for 8:1 V conversion and over 60% efficiency for conversion ratios up to 16:1. Index Terms-Capacitively coupled level shifter, CMOS/GaN face-to-face bonding, gate drive for GaN, integrated voltage regulator (IVR), power electronics.

This paper explores the extent to which a solid-state transmitter can be miniaturized, while still using RF for wireless information transfer and working with power densities and operating voltages comparable to what could be harvested from a living system. A 3.1 nJ/bit pulsed millimeter-wave transmitter, 300 by 300 by 250 in size, designed in 32-nm SOI CMOS, operates on an electric potential of 130 mV and 3.1 nW of dc power. Farfield data transmission at 33 GHz is achieved by supply-switching an LC-oscillator with a duty cycle of . The time interval between pulses carries information on the amount of power harvested by the radio, supporting a data rate of 1 bps. The inductor of the oscillator also acts as an electrically small on-chip antenna, which, combined with millimeter-wave operation, enables the extremely small form factor.Index Terms-Antennas, low power design, monolithic integrated circuits, radio frequency oscillators. 1549-8328

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