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§: A.B and M.D contributed equally to this work Abstract:New paradigms are required in microelectronic when the transistor is in its downscaling limit and integration of materials presenting functional properties not available in classical silicon is one of the promising alternatives. Here, we demonstrate the possibility to grow La 0.67 Sr 0.33 MnO 3 (LSMO) functional materials on amorphous substrate with properties close to films grown on single crystalline substrate by use of a two-dimensional seed layer. X-ray diffraction and electron backscatter diffraction mapping demonstrate that Ca 2 Nb 3 O 10  nanosheets (NS) layer induces epitaxial stabilization of LSMO films with a strong out-of-plane (001) texture, whereas the growth of LSMO films on uncoated glass substrates exhibit a non-textured polycrystalline phase. Magnetic properties of LSMO films deposited on NS are similar to those of the LSMO grown on SrTiO 3 single crystal substrates in the same conditions (which is used as reference in this work). Moreover, transport measurements take advantages of the texture and polycrystalline properties in order to induce low field magnetoresistance at low temperature and also a high value of 40%

KNbO 3 films grown on two-dimensional Ca 2 Nb 3 O 10 nanosheets covering glass substrate.  (001) preferential orientation induced by subjacent nanosheets layer.  Similar microstructure as epitaxial film grown on (100)SrTiO 3 .

Highlights  Synthesis of BiFeO3 thin films by chemical solution deposition.  Randomly oriented growth of BiFeO3 films on silica and (100)Si.  Highly (100) oriented growth of BiFeO3 on Ca2Nb3O10-nanosheets seed layers.  Low cost processes at low temperature on inexpensive large area substrates.

The decrease of the growth temperature of platinum (Pt) thin film on silicon substrate was studied using Ca 2 Nb 3 O 10 nanosheets (CNOns) as seed layer. These nanosheets were obtained by the delamination of the layered perovskite KCa 2 Nb 3 O 10 and they were deposited on silicon substrates by the Langmuir-Blodgett method. Pt thin films were sputtered on silicon coated by CNOns (CNOns/SiO 2 /Si), and on TiO 2 /SiO 2 /Si substrates for comparison, at temperatures ranging from room temperature up to 625 °C. X-ray diffraction, scanning electron microscopy, and atomic force microscopy were used to characterize the crystalline quality, thickness, surface morphology and roughness of the Pt thin films. Highly (111) textured Pt thin films were obtained on CNOns/SiO 2 /Si at substrate temperature as low as 200 °C. The full width at half maximum of the rocking curve of the (111) X-ray peak was about one degree, indicating a high crystalline orientation. The resistivity was measured at room temperature by the four point probes method to confirm the quality of Pt thin films elaborated at low temperatures. These results pave the way for easier integration of highly textured platinum thin film in low temperature microelectronic processes.