The decrease of the growth temperature of platinum (Pt) thin film on silicon substrate was studied using Ca 2 Nb 3 O 10 nanosheets (CNOns) as seed layer. These nanosheets were obtained by the delamination of the layered perovskite KCa 2 Nb 3 O 10 and they were deposited on silicon substrates by the Langmuir-Blodgett method. Pt thin films were sputtered on silicon coated by CNOns (CNOns/SiO 2 /Si), and on TiO 2 /SiO 2 /Si substrates for comparison, at temperatures ranging from room temperature up to 625 °C. X-ray diffraction, scanning electron microscopy, and atomic force microscopy were used to characterize the crystalline quality, thickness, surface morphology and roughness of the Pt thin films. Highly (111) textured Pt thin films were obtained on CNOns/SiO 2 /Si at substrate temperature as low as 200 °C. The full width at half maximum of the rocking curve of the (111) X-ray peak was about one degree, indicating a high crystalline orientation. The resistivity was measured at room temperature by the four point probes method to confirm the quality of Pt thin films elaborated at low temperatures. These results pave the way for easier integration of highly textured platinum thin film in low temperature microelectronic processes.

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