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Results on growth, electrical, and optical properties of Ga~_~In~Sb layers (x ~< 0.5) prepared by atmospheric pressure MOCVD are described. A Ga08In0.2As0.18Sb0.s2 alloy was also obtained by MOCVD in the miscibility gap. The spectral responses of Ga0.61In0.39Sb and Ga0.sIn0.2As0.18Sb0.82/GaSb p-n photodiodes showed wavelength cut off at 2.5 and 2.3 p.m at room temperature. Gal-flnxSb,InAsl_~Sb~ ternary alloys and Ga~_xInxAsySbl-u, InAs~-~-uSbxP u quaternary alloys are possible materials for optical fiber communications in the 2.5-4 i~m range (1-5).In this paper, results on growth, electrical, and optical properties of Ga~_fln~Sb layers (x ~< 0.5) prepared by atmospheric pressure metal organic chemical vapor deposition (MOCVD) on GaSb and GaAs substrates are described. The solid composition (x) dependence on the growth temperature and growth rate variations with x are shown. First results on the concentration of layers grown on GaSb substrates are given. In the optical characterizations part the variations of the absorption coefficient ~ vs. energy for different x and spectral response of Ga0.61In0.39Sb/GaSb heterojunction are shown.The results of growth of Gal_~In~s~Sbl_y quaternary alloys for x, y ~< 0.2 deposited on GaSb and GaAs substrates are also given. The surface morphology is shown. The electrical characterization of a Ga0.sIn0.2As0.18Sb0.82/GaSb p-n diode and the spectral response are presented.