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We have identically prepared Au/n-InP/In Schottky barrier diodes (SBDs). The barrier height for the Au/n-InP/In SBDs from the current-voltage characteristics has varied from 0.557 eV to 0.615 eV, and the ideality factor n from 1.002 to 1.087. We have determined a lateral homogeneous barrier height value of approximately 0.597 eV for the Au/n-InP/In SBD from the experimental linear relationship between barrier heights and ideality factors. The barrier height value obtained from the reverse bias C −2 -V characteristics has varied from 0.512 eV to 0.572 eV and statistical analysis yields the mean (C-V ) = 0.562 ± 0.004 eV. A doping density of about (2.90 ± 0.05) × 10 15 cm −3 has been determined from the reverse bias C −2 -V characteristics.

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