Temperature-dependent current–voltage and capacitance–voltage characteristics of the Ag/n-InP/In Schottky diodes

Temperature dependent current–voltage characteristics of the Cd/CdO/n–Si/Au–Sb structure

“…All of the electrical anomalies in the Schottky barrier diodes may be attributed to the presence of Schottky barrier height inhomogeneity [4][5][6][7][8][9][10][11][12][13][14][15]. Lately, the nature and origin of the decrease in the barrier height and increase in ideality factor with a decrease in temperature in some studies [16][17][18][19][20][21][22] have been successfully explained on the basis of a thermionic emission mechanism with Gaussian distribution of the barrier heights. Up to now, much effort has been devoted to the preparation metal-interfacial layer-semiconductor structures.…”

Single Gaussian distribution of barrier height in Al/PS–ZnPc/p-Si type Schottky barrier diode in temperature range of 120–320 K

“…It is clear that I-V plot has a straight line in the intermediate bias region (*0.15 B V B 0.55) for each temperature, but deviate considerably from linearity at high enough forward biases (V C 0.6 V) because of the effect of R s and interfacial ZnPc layer [1,2]. For MS or MIS type SBD and solar cell, the relation between the forward bias current (I F ) and applied voltage (V F [ 3kT/q) could be expressed as Eq.…”

“…For MS or MIS type SBD and solar cell, the relation between the forward bias current (I F ) and applied voltage (V F [ 3kT/q) could be expressed as Eq. 1 [1,2,28]:…”

“…Development and improvement of thermally stable devices having high BH and low reverse leakage current (I R ) remain as a challenge problem. Therefore, experimental studies about such devices, their related areas and investigation of their basic parameters, including BH, MS interface located surface states and ideality factor (n) for MS or metal-insulatorsemiconductor (MIS) type SBDs and solar cells are of great importance in materials science and electronic studies [1][2][3][4][5][6][7][8][9][10][11][12]. Usually, thermionic emission theory (TE) was used to investigate these parameters for ideal SBDs.…”

Effects of annealing temperature on electrical and structural properties of Mo/n‐InP (100) Schottky contacts

“…Also, they obtained barrier heights ranging from 0.27 to 0.51 eV when the temperature varied from 80 to 320 K. Huang et al [9] fabricated a high-performance double metal structure using Pt and Al as Schottky contacts on n-InP and reported an effective barrier height of 0.74 eV. Cimilli et al [10] fabricated a Schottky contact with Ag to n-InP and studied the temperature dependence of I-V characteristics and C-V characteristics in the temperature range of 30-320 K. Cetin and Ayyildiz fabricated Au, Al and Cu/n-InP (1 0 0) Schottky barrier diodes on n-InP surfaces and investigated the influence of the air-grown oxide on the electrical performance. [11] The chemical composition of grown surface oxides were investigated using XPS, and P 2 O 5 and In(PO) 4 were found on the air-exposed surface.…”