Temperature dependent current–voltage characteristics of the Cd/CdO/n–Si/Au–Sb structure

Structural, optical and electrical characterization of gadolinium and indium doped cadmium oxide/p-silicon heterojunctions for solar cell applications

“…So, the interface states play an important role on determination of Schottky barrier height and other electronic parameters and these can affect diode performance, stability and reliability. The largest value of F b (0.61 eV) in present work is found to be smaller than 0.87 eV reported by Siad et al 28 and Saglam et al 29 for the Al/p-Si Schottky barrier diodes. The case may be ascribed to CdO or CGIO lms modifying the effective barrier height by inuencing space charge region of the Si substrate.…”

Synthesis and characterization of O-PDI for futuristic optoelectronic and rectifier applications

“…30,31 The barrier height is obtained from eqn (9), and can be written asThe equation incorporates several variables and constants: q represents the elementary charge (electron), V signifies the applied voltage across the hetero-junction, k denotes Boltzmann's constant (1.38 × 10 −23 J K −1 ), T represents the absolute temperature in kelvin, A represents the effective area of the device (approximately ∼1.5 cm 2 ), A * is the Richardson constant specific to p-c-silicon and is equal to 32 A cm −2 K −2 , and m * represents the effective mass for holes perpendicular to the layer. 22,32,33 I 0 can be determined from the y -intercept of the ln I vs. V plot at V = 0, as shown in Fig. 10(d).…”

Exploring the Temperature-Dependent Microelectrical Characteristics of Organic-Silicon Heterojunctions in the Absence of Luminance

“…However, it is noteworthy that the actual value of n remains significantly higher than unity due to the nonuniform distribution of surface states at the O/S interface and the existence of multiple low Schottky barrier height patches (barrier inhomogeneities), and series resistance. 28 The barrier height inhomogeneities can be comprehended by examining the Gaussian distribution of Ø b . Within this framework, the apparent barrier height, consisting of a mean value Ø B and a standard deviation σ s , can be depicted in the following manner: 29…”

“…Consequently, the influence of barrier height inhomogeneities on the I – V characteristic diminishes, resulting in less deviation from ideality. However, it is noteworthy that the actual value of n remains significantly higher than unity due to the nonuniform distribution of surface states at the O/S interface and the existence of multiple low Schottky barrier height patches (barrier inhomogeneities), and series resistance …”