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Large scale deposition of hydrogenated amorphous silicon (a-Si) for photovoltaic panels is discussed. The ‘‘box carrier’’ concept is introduced for hydrogenated a-Si deposition. The spectral response studies prove that cross contamination is not present. Using this new concept, the average of 72 panels in one run is 5.6%. An I-V curve for a square foot panel with an efficiency of 7.2% is shown. The utilization efficiency of silane is much higher (61%) than what has previously been reported (8%).

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Printed on paper containing at least 50% wastepaper and 10% postconsumer waste DISCLAIMER Portions of this document may be illegible electronic image products. Images are produced from the best available original document.TABLE OF CONTENTS List of figures List of tables 1.0 SUMMARY 2.0 INTRO D U CTI 0 N 3.0 ABSORBER DEVELOPMENT 3.1 3.2 Metals Deposition and Precursor Formation Refinement of Selenization Process 3.2.1 Rapid ramping of substrate temperature 3.2.2 Improvement of the standard process 3.3 Higher Bandgap Alloys Using Sulfur 4.0 DEVICE RESULTS 4.1 4.2 4.3 4.4 4.5 4.6 4.7