External controlling the phase transition behavior of vanadium dioxide is important to realize its practical applications as energy-efficient electronic devices. Because of its relatively high phase transition temperature of 68 °C, the central challenge for VO2-based electronics, lies in finding an energy efficient way, to modulate the phase transition in a reversible and reproducible manner. In this work, we report an experimental realization of p-n heterojunctions by growing VO2 film on p-type GaN substrate. By adding the bias voltage on the p-n junction, the metal-insulator transition behavior of VO2 film can be changed continuously. It is demonstrated that the phase transition of VO2 film is closely associated with the carrier distribution within the space charge region, which can be directly controlled by the bias voltage. Our findings offer novel opportunities for modulating the phase transition of VO2 film in a reversible way as well as extending the concept of electric-field modulation on other phase transition materials.

This paper investigates the influence of the N-type buried layer (NBL) layout and LOCOS space on the ESD performance and trigger voltage of the lateral DMOS (LDMOS) device. Without adequate LOCOS spacing, LDMOS is vulnerable to ESD damage. If the LOCOS space is sufficiently wide, adding NBL structure can further improve LDMOS ESD performance significantly. This is because NBL can switch the current passage from the surface channel region to the bulk NBL during an ESD zapping, thus, avoiding localized highly damaging ESD current flow in the channel region.