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Performance of a high voltage polycrystalline Si thin-film transistor (TFT) with variable doping slots in the offset region is demonstrated in this letter. In the proposed structure, the width of the doping slots and the gaps increase from the drain toward the gate edge. Compared to offset-drain (OD) TFT fabricated on the same substrate, the proposed structure exhibits an increase in on current by a factor of 15 at 0.1 V drain bias and by an order at 10 V drain bias. The device also shows a more saturate drain characteristic. The blocking capability is 152 V, which is almost the same as the OD TFT and is attributed to the voltage sharing across the doping slots.