Schottky barrier formation on r.f.-plasma enhanced chemical vapour deposited hydrogenated amorphous carbon

Paul, Shashi; Clough, F.J.

doi:10.1016/s0925-9635(98)00313-6

Cited by 16 publications

(11 citation statements)

References 14 publications

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“…The characteristics of the rectifying diode demonstrated here may be compared to the Schottky diodes reported in Ref. 24, the p-n junction diode reported in Ref. 25, and the a-C:H and ta-C heterojunction diodes reported in Refs.…”

Section: Rapid Communicationsmentioning

confidence: 83%

Electron delocalization in amorphous carbon by ion implantation

et al. 2001

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The electrical properties of amorphous carbon are governed by the high localization of the sp 2 states, and conventional methods of altering the sp 2 content result in macroscopic graphitization. By using ion beams we have achieved a delocalization of the states by introducing nanoclustering and hence improving the connectivity between existing clusters, as demonstrated by the increase in the conductivity by two orders of magnitude without modification of the band gap. At higher doses, paramagnetic relaxation-time measurements indicate that exchange effects are present. This unveils the possibility of amorphous carbon-based electronics by tailoring the ion-beam conditions, which we demonstrate in the form of a rectifying device.

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Section: Rapid Communicationsmentioning

confidence: 83%

Electron delocalization in amorphous carbon by ion implantation

et al. 2001

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“…The applications for DLC coatings are widespread, ranging from coatings of machinery tools, car engine components, electronic devices and biological implants [3,4]. Commonly used fabrication methods are: Mass-selected ion beam deposition (MSIBD) [5], magnetron sputtering [6], plasma-enhanced chemical vapour deposition (PECVD) [7], chemical vapour deposition (CVD) [8] and pulsed laser deposition (PLD) [9].…”

Section: Introductionmentioning

confidence: 99%

Ultra-smooth diamond-like carbon coatings with high elasticity deposited at low temperature by direct ion beam deposition

Markwitz

Mohr

Carpeño

et al. 2014

Surface and Coatings Technology

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“…All structures show symmetrical I-V characteristics for negative and positive applied voltages. Symmetrical I-V characteristics are indicative of a bulk limited conduction mechanism and of an ohmic character for Al contacts [20,21].…”

Section: Resultsmentioning

confidence: 94%