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The synthesis of diethylindiumdiphenylphosphinate and the crystal structures of dimethylgalliumdiphenylphosphinate and diethylindiumdiphenylphosphinate are reported. The two structures confirm the proposed dimeric nature of the title compounds with bridging diphenylphosphinate groups. [Ph2P(O)2Ga(CH3)]2 crystallizes triclinically, PĪ, with a = 9.483(6), b = 10.216(4), c = 8.780(9)Å, α = 101.66(5)°, β = 113.74(5)°, γ = 69.93(5)° and Ζ = 1 (dimer). [Ph2P(O)2In(C2H5)2]2 crystallizes monoclinically, C2/c, with a = 19.971(5), b = 8.590(2), c = 19.457(5)Å, β = 102.91(2)° and Ζ = 4 (dimers). Both structures contain tetrahedrally coordinated phosphorous and metal atoms.

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A detector stage comprising a photodiode, a field-effect transistor, and a load resistor, and a wavelength demultiplexer have been monolithically integrated in the GaInAsP/InP material system. Chips were mounted into complete modules and operated in a 1.3 μm/1.55 μm bidirectional transmission link. At 576 Mbit/s and 10−9 bit error rate the sensitivity of the module was −21 dBm, while the intrinsic sensitivity of the receiver was determined to be −28 dBm.