The findings from this prospective controlled study indicate that the risk for long-term complications attributable to distal shunt malfunction is reduced when laparoscopic techniques are used to place the peritoneal end of the shunt catheter.
Between October 1998 and December 1999 50 patients with a primary cancer of the rectum were treated by sphincter saving anterior resection of the rectum and total mesorectal excision. Eight patients were given a neoadjuvant combined radio-chemotherapy. The anastomoses were performed in the triple-stapling technique with a Premium Plus CEEA stapling device (Fa. Tyco Health Care, Tönisvorst, Germany) or with a Proximate ILS curved stapling device (Fa. Ethicon Endo Surgery, Norderstedt, Germany). The anastomoses were situated in 7 cm or in lower distance from the anal skin. In all patients with complete anastomotic tissue rings the anastomoses were protected with the transanal tube. The integrity of the anastomosis (n = 48) was checked for completeness in the 2nd and 12th postoperative week. The patients were sigmoidoscoped and the anastomoses were controlled by transanal ultrasonography. During the hospital stay 2 patients (4.2 %) with a clinically evident anastomotic leakage were detected. 3 patients (6.2 %) with an asymptomatic anastomotic leakage were detected by computertomography. The anastomoses of 27 patients (56.2 %) were clinically and by ultrasonographical examination intact. In these patients a postoperative radiogram was not indicated. Relaparotomy was necessary in one patient for bleeding, in two patients for anastomotic leaks and in three patients for ileus (12.5 %). Because of low anastomotic leakage rate and low morbidity we find the transanal tube to be at least equivalent to conventional colostoma for anastomotic protection.
Articles you may be interested inHigh quality HfO2/p-GaSb (001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness Appl. Phys. Lett. 105, 222103 (2014); 10.1063/1.4903068 Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electronmobility transistors by dynamic capacitance dispersion technique Appl. Phys. Lett. 103, 033510 (2013); 10.1063/1.4813912 Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors Appl. Phys. Lett. 100, 113509 (2012); 10.1063/1.3694768 Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al 2 O 3 prepared by atomic layer depositionIn this work, we present the terrace etching technique to obtain excessive thickness series of atomic layer deposition (ALD) grown Al 2 O 3 and HfO 2 on GaN-cap/AlGaN/GaN heterostructures allowing for the detailed study of oxide charge distribution and its impact of the metal-insulatorsemiconductor high electron mobility transistor (MISHEMT) threshold voltage. By modeling the experimental plot of threshold voltage versus oxide thickness on the basis of experimentally determined two-dimensional electron gas charge density in AlGaN/GaN MISHEMTs, we separated the interface and bulk charge components and determined the oxide-metal barrier height for the investigated gate dielectrics. In both Al 2 O 3 and HfO 2 gate dielectrics, the oxide charges are mainly located at the oxide/GaN interface. Determining the interface trap charges from comparison of the pulsed capacitance-voltage (CV) technique with very fast voltage sweep to the modulation type CV method with slow DC voltage ramp, we extracted positive fixed charges of N Ox ¼ 2:7 Â 10 12 cm À2 for Al 2 O 3 and N Ox ¼ 7:8 Â 10 12 cm À2 for HfO 2 . We found a strong V th shift of opposite direction for both high-k materials, corresponding to negatively charged up trap states at the HfO 2 /GaN interface and positively charged up trap states at the Al 2 O 3 /GaN interface. The evaluation of the metal-oxide barrier height in dependence of the metal work function followed the trend of the Schottky model, whereas HfO 2 showed less Fermi level pinning compared to Al 2 O 3 indicating the presence of an increased number of interface states in Al 2 O 3 on GaN. V C 2015 AIP Publishing LLC. [http://dx.
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