The three-level and spectroscopic charge pumping techniques, deep level transient spectroscopy and capacitance-voltage measurements are both used to determine the energy distribution of Si–SiO2 interface states on submicrometer metal–oxide–semiconductor field-effect transistors and metal–oxide–semiconductor capacitors. This study is a systematic comparative analysis between charge pumping techniques and capacitance measurements. The measurements have been performed on different structures (n- and p-type materials, low and high interface states densities) and the performances of each technique have been compared.

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