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Low leakage and low active-power 25 nm gate length C-MOSFETs are demonstrated for the first time with a newly proposed Omega-(0) shaped slruchue, at a conservative 17-19 A gate oxide thickness, and with excellent hot carrier immunity. For 1 volt operation, the transistors give drive currents of 1440 pNpm and 780 pA/pm with off state leakage currents of 8 n N p and 0.4 nNpm for N-FET and P-FET, respectively. A low voltage version achieves, at 0.7 V, drive currents of 1300 p A / p for N-FET and 550 pNpm for P-FET at an off current of 1 pNpm. N-FET gate delay (CYII) of 0.39 ps and P-FET gate delay of 0.88 ps exceed International Technology Roadmap for Semiconductors (ITRS) projections [I].

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