The 2 µm wavelength band has proven to be a promising candidate for the next communication window. Wavelength-division multiplexing (WDM) transmission at 2 µm can greatly increase the capacity of optical communication systems. Here, we experimentally demonstrate a high-performance silicon photonic flat-top 8-channel WDM (de)multiplexer based on cascaded Mach-Zehnder interferometers for the 2 µm wavelength band. A three-stage-coupler scheme is utilized to provide passbands and reduce channel crosstalk, and 11 thermo-optic phase shifters have allowed active compensation of waveguide phase errors. The fabricated device shows low insertion loss (< 0.9 dB), channel crosstalk (< 20.6 dB) and 1-dB bandwidth of 2.3 nm for operating wavelength ranging from 1955nm to 1985nm. The demonstrated (de)multiplexer could potentially be used for WDM optical data communication in the 2 µm spectral band.

Multimode interference (MMI)-based power splitters are fundamental building blocks for integrated photonic devices consisting of an interferometer structure. In order to forestall the ‘capacity crunch’ in optical communications, integrated devices capable of operating in multiple spectral bands (e.g., the conventional telecom window and the emerging 2 µm wave band) have been proposed and are attracting increasing interest. Here, we demonstrate for the first time, to the best of our knowledge, the realization of a dual-band MMI-based 3 dB power splitter operating at the 1.55 and 2 µm wave bands. The fabricated power splitter exhibits low excess losses of 0.21 dB and 0.32 dB with 1 dB bandwidths for 1500–1600 nm and 1979–2050 nm, respectively.

We design and demonstrate a low-reflection TM-pass polarizer with high polarization extinction ratio > 30 dB over a 260 nm bandwidth. The fabricated polarizer exhibits excess loss < 0.9 dB for 1410-1700 nm wavelength range.

Efficient fiber‐chip couplers operating at distinct wavelength bands are key components to combine or split different optical bands for emerging data transmission and nonlinear applications. Herein, a dual‐band silicon‐integrated grating coupler (GC) operated at 1.55 and 2 μm wavebands is designed and demonstrated. The proposed device can simultaneously couple 1.55 and 2 μm wavebands light into the in‐plane waveguides at the same incident angle. Numerical simulations indicate that coupling efficiencies (CEs) are −2.5 and −3.9 dB for center wavelengths at 1561 and 1979 nm, respectively. The dual‐band GC is experimentally demonstrated on a commercially available 340 nm silicon‐on‐insulator wafer. The fabricated dual‐band GC with center wavelengths of 1559 and 1968 nm obtains CEs of −4.9 and −6.4 dB, with 3 dB bandwidths of 81 and 80.4 nm, respectively. Also, the first proof‐of‐concept demonstration of 10 Gb s−1 wavelength division multiplexing transmission at 1.55 and 2 μm waveband is presented based on the fabricated dual‐band GC.