Crystallization and phase transformation of amorphous Co 0:33 Si 0:67 thin films prepared by radio frequency magnetron sputtering using CoSi 2 alloy target were researched by X-ray diffraction in situ. The results showed that CoSi formed firstly at 250 C and some of the films were still amorphous. The residual amorphous films transformed to CoSi 2 at 300 C, CoSi and CoSi 2 remained stable at 350-500 C and CoSi transformed to CoSi 2 when the temperature was elevated further. The first phase that precipitated from the amorphous Co-Si films was decided by the effective heat of formation of phases and the short-range structure of amorphous films.

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