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Un-and Se-doped nanostructured SnS thin films were synthesized (deposited) on FTO-coated glass substrates using an electrodeposition method. A study of the crystallinity indicated an orthorhombic phase with a grain size of 54-75 nm. Morphological features of the films showed a well-developed rod structure (less than 100 nm). Optical energy band gaps in the range of 1.26-1.46 eV were estimated for the deposited films. The effect of Se as a dopant on the determination of the optoelectronic and conductivity conversion from p-to n-type nanostructured SnS thin films was investigated. In addition, an n-type Se-SnS film was obtained at lower concentrations of Se. This technique is suggested to control the electrical conductivity of deposited films to be applied in photoswitching-based devices.

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