Broad Spectral Response of Se‐Doped SnS Nanorods Synthesized through Electrodeposition

Abstract

Un-and Se-doped nanostructured SnS thin films were synthesized (deposited) on FTO-coated glass substrates using an electrodeposition method. A study of the crystallinity indicated an orthorhombic phase with a grain size of 54-75 nm. Morphological features of the films showed a well-developed rod structure (less than 100 nm). Optical energy band gaps in the range of 1.26-1.46 eV were estimated for the deposited films. The effect of Se as a dopant on the determination of the optoelectronic and conductivity conversion from p-to n-type nanostructured SnS thin films was investigated. In addition, an n-type Se-SnS film was obtained at lower concentrations of Se. This technique is suggested to control the electrical conductivity of deposited films to be applied in photoswitching-based devices.

Electrodeposition and Characterization of a Tin Sulfide‐Electrochemically Reduced Graphene Oxide Heterojunction

“…In fact, Figure shows that at a potential of −0.624 V (corresponding to a 0 V respect to the Reversible Hydrogen Electrode, RHE) the SnS photolelectrode exhibited a photocurrent of 37 μA cm −2 , whereas the SnS/ERGO heterojunction exhibited a photocurrent of 66 μA cm −2 , representing a significantly enhancement in its photoactivity (about 78 %). Photocurrent values that are similar or even better to those previously reported in the literature for different SnS architectures, i. e: 70 μA cm −2 (porous structure,), 10 μA cm −2 (thin films,) and 0.02 μA cm −2 (nanorods arrays,). Moreover, a stability test has been performed for the SnS/ERGO heterojunction photoelectrode, (see inset of Figure (b)).…”

“…It is well known that SnS is a p‐type semiconductor, and the Mott‐Schottky plots shown in Figure confirm this fact. However, SnS films synthetized through different techniques have been reported to exhibit as n‐type conductivity ,. Although this behavior is attributed to deviation from stoichiometry or to an extrinsic doping, clearly it is an issue which must be kept in mind when Mott‐Schottky analyses are carried out.…”

Extent of dependence of crystalline, morphological, optical and electrical properties on deposition time of sprayed SnS thin films

“…In addition, SnS semiconductor can have p‐type or n‐type electrical conductivities (Messaoudi et al, 2019). SnS thin films can be prepared by several methods such as chemical bath deposition (CBD) (Khan et al, 2022), vacuum evaporation method (Sharma et al, 2020), electrodeposition (Cheng et al, 2006; Jamali‐Sheini et al, 2017), dip coating (Chaki et al, 2016), spin‐coating process (Garmima et al, 2022), and spray pyrolysis. Among these techniques, spray pyrolysis is a simple and less expensive method compared to other chemical methods; it does not require any vacuum vessels and is suitable for large surface substrate coating (Messaoudi et al, 2020; Nouri et al, 2022).…”

GO nanosheets decorated with SnS nanoparticles: excellent photocatalytic performance under visible-light irradiation

“…25 Also, Farid Jamali Sheini et al conducted extensive research on the application of tin sulfide nanostructures as an absorber layer in solar cells. [26][27][28] In this research, by creating a composite of tin sulfide with different concentrations of graphene oxide, an attempt was made to increase the amount of light absorption and also to provide effective separation of the photogenerated electron-hole pairs. Also, graphene oxide has excellent optical, electronic, and mechanical properties, and the change in its physicochemical properties depends on factors such as microstructures, the use of doping, the degree of oxidation-reduction, and the size of the sheets.…”