Despite the progressive enhancement in the flexibility of Pb-based perovskites for optoelectronic applications, regrettably, they are facing two main challenges; (1) instability, which originates from using organic components in the perovskite structure, and (2) toxicity due to Pb. Therefore, new, stable non-toxic perovskite materials are demanded to overcome these drawbacks. The research community has been working on a wide variety of Pb-free perovskites with different molecular formulas and dimensionality. A variety of Pb-free halide double perovskites have been widely explored by different research groups in search for stable, non-toxic double perovskite material. Especially, Cs-based Pb-free halide double perovskite has been in focus recently. Herein, we present a review of theoretical and experimental research on Cs-based Pb-free double halide perovskites of structural formulas Cs2M+M3+X6 (M+ = Ag+, Na+, In+ etc.; M3+= Bi3+, In3+, Sb3+; X = Cl−, Br−, I¯) and Cs2M4+X6 (M4+ = Ti4+, Sn4+, Au4+ etc.). We also present the challenges faced by these perovskite compounds and their current applications especially in photovoltaics alongside the effect of metal dopants on their performance.

This study focuses on the fabrication and characterization of Cs2AgBiBr6 double perovskite thin film for field-effect transistor (FET) applications. The Cs2AgBiBr6 thin films were fabricated using a solution process technique and the observed XRD patterns demonstrate no diffraction peaks of secondary phases, which confirm the phase-pure crystalline nature. The average grain sizes of the spin-deposited film were also calculated by analysing the statistics of grain size in the SEM image and was found to be around 412 (± 44) nm, and larger grain size was also confirmed by the XRD measurements. FETs with different channel lengths of Cs2AgBiBr6 thin films were fabricated, under ambient conditions, on heavily doped p-type Si substrate with a 300 nm thermally grown SiO2 dielectric. The fabricated Cs2AgBiBr6 FETs showed a p-type nature with a positive threshold voltage. The on-current, threshold voltage and hole-mobility of the FETs decreased with increasing channel length. A high average hole mobility of 0.29 cm2 s−1 V−1 was obtained for the FETs with a channel length of 30 µm, and the hole-mobility was reduced by an order of magnitude (0.012 cm2 s−1 V−1) when the channel length was doubled. The on-current and hole-mobility of Cs2AgBiBr6 FETs followed a power fit, which confirmed the dominance of channel length in electrostatic gating in Cs2AgBiBr6 FETs. A very high-hole mobility observed in FET could be attributed to the much larger grain size of the Cs2AgBiBr6 film made in this work.

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An Egyptian blue integrated luminescent solar concentrator (LSC) is reported.

Doping is a unique strategy to modulate the optical and electronic properties of semiconducting materials. This study reports a facile approach to fabricate nitrogen-doped TiO2 (N-doped TiO2) photoanode for DSSC application. A solid-state reaction was employed to synthesize a series of N-doped TiO2 nanoparticles with different volumetric ratios of nitrogen dopant and the TiO2 host. The NH4OH as a nitrogen dopant was combined with P25-TiO2 via grinding followed by calcination at 500°C. The synthesized nanoparticles were extensively characterized by XRD, XPS, EDX, SEM, and TEM techniques. XRD results suggested that the incorporation of nitrogen had not altered the structure of the TiO2 lattice, and the presence of nitrogen was confirmed through the XPS and EDX spectroscopies. SEM and TEM images, obtained before and after N doping, showed that N-doped TiO2 nanoparticles with low amounts of NH4OH (10 and 20 μL) had retained their spherical shapes and sizes while use of higher amounts of the N dopant (30 and 40 μL) had led to agglomeration of nanoparticles. BET and BJH analyses revealed that the optimized N-doped TiO2 with 20 μL of NH4OH (20N-TiO2) possesses the highest average pore diameter of 15.99 nm. Furthermore, the UV-visible spectroscopic analysis confirmed a red shift in the optical absorption edge on N doping and the corresponding bandgap reduced from 3.15 to 2.94 eV with increase in the amount of NH4OH from 0 to 40 μL. Eventually, DSSCs were fabricated using the prepared pure TiO2 and N-doped TiO2 photoanodes, N719 dye, I − / I 3 − electrolyte, and Pt counter electrode, followed by investigating their performance under simulated irradiation with 100 mW/cm2 intensity with AM 1.5 filter. The photoanode doped with 20 μL of NH4OH (20N-TiO2) exhibited the highest power conversion efficiency (PCE) of about 6.16%, which was 20% higher than that of the control device, with improved J SC . This enhancement in J SC could be predominantly attributed to higher dye uptake along with marginal contribution by reduced rate of recombination. Among the reported studies on DSSCs with N-doped P25-TiO2 photoanodes, our method gives the best efficiencies for the DSSCs.