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In this work, the electronic properties of Fe-doped CuO (Cu 1-x Fe x O) thin films are studied by using a standard density functional theory (DFT) based on the ab-initio approach under the Korringa-Kohn-Rostoker coherent potential approximation (KKR-CPA). This study is carried out in the framework of the general gradient approximation (GGA) and self-interaction-corrected (SIC). The density-of-states (DOSs) in the energy diagram are illustrated and discussed. The computed electronic properties of our compounds confirm the half-metalicity nature of this material (CuO). In addition, the absorption spectra of the studied compound within the Generalized Gradient Approximation GGA, as proposed by Perdew-Burke-Ernzerhof (PBE) and GGA-PBE -SIC approximations are examined. Compared with the pure CuO, the Fermilevels of doped structures are found to move to the higher energy directions. Finally, the effect of Fe-doping method in CuO can transform the material to half-metallic one, with a high wide impurity band in two cases of approximations local density approximation (LDA) and SIC method.

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