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In this paper, a D–A polymer (PIB) containing carbazole as the donor group in the main chain and benzimidazole benzisoindolinone as the acceptor group was synthesized by Suzuki reaction. The Suzuki reaction, also known as the Suzuki coupling reaction, is a relatively new organic coupling reaction in which aryl or alkenyl boronic acids or boronic acid esters react with chlorine, bromine, iodoaromatic hydrocarbons or alkenes under the catalysis of zerovalent palladium complexes cross-coupling. A series of devices were fabricated by a spin-coating approach, and the devices all exhibited ternary resistance switching storage behavior. Among them, the composite device with the mass fraction of SnO2 NPs of 5 wt% has the best storage performance, with a threshold voltage of −0.4 V and a switching current ratio of 1:101.5:104.5. At the same time, the current of the device remained stable after a 3-h test. Furthermore, after 103 cycles, the current has no obvious attenuation. The device has good stability and continuity. Moreover, the conduction mechanism is further revealed. Inorganic nanoparticle composite devices have splendid memory performances and exhibit underlying application significance in storing data.

With the rapid development of information technology, binary memory may not meet the requirements of future information and communication technology, hence multilevel memory is widely studied. Herein, a donor-acceptor-type polymer...

Multi-level memory can greatly improve information density, so it has been widely studied. In this study, a carbazole-based donor-acceptor polymer poly[2,7-9-(heptadecan-9-yl)-9H-carbazole-alt-7H-benzimidazo[2,1a]benz[de]isoquinolin-7-one] (PCz-BB) is synthesized, which exhibits flash-type ternary memory behavior. Further, CdS nanoparticles (NPs) are embedded into the prepared polymer to enhance the storage performance. The current-voltage (I-V) characteristics of memory devices based on PCz-BB:CdS composites and the effect of the embedding ratio of CdS NPs on the memory devices are studied. It is verified that the ON2/ON1/OFF current ratios of the devices at low CdS embedding concentrations are improved, and the threshold voltages are also reduced. The memory device based on the optimal embedding concentration (3 wt% CdS) exhibits a high ON2/ON1/OFF current ratio of 18631:72:1, a low threshold voltage of −0.40/−1.20 V, and excellent stability. The mechanism of resistive switching is explained by the theory of charge traps and conductive filaments. This work provides a new avenue for high-performance multi-level organic electrical storage materials.