Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed optical excitation, the nanowire exhibits lasing, with a low threshold of 600 W/cm2, a narrow linewidth of 0.39 nm, and a high Q factor of 2000 at low temperature. Lasing is observed up to 300 K, with an ultrasmall temperature dependent wavelength shift of 0.045 nm/K. This work paves the way towards ultrasmall, low-consumption, and high-temperature-stability near-infrared nanolasers

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