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Thin films and superlattices of LiTaO3 and LiNbO3 were grown on (0001) LiTaO3 and LiNbO3 wafers by molecular beam epitaxy. Solid sources were employed for the evaporation of Li, Ta, and Nb while oxygen was activated in an ECR plasma source. Samples were completely oxidized during the growth as confirmed by quantitative surface analyses. Crystalline films were obtained on both substrates at a growth rate of 0.1 nm/s and substrate temperature of 900°C. Films were caxis oriented but showed in-plane 60° rotational domains. Superlattice structure with a bilayer period of 10 nm was grown on LiNbO3. It showed well defined interfaces and appeared to be strained.

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