Articles you may be interested inReduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain-relaxation procedure Appl.

We have grown ZnCdSe/ZnCdMgSe quantum well (QW) structures nearly lattice matched to InP substrates. Emission energies from 2.307 to 2.960 eV were measured by low-temperature photoluminescence at 10 K for samples with QW thicknesses between 5 and 80 Å. By using exactly lattice-matched QWs, the lower limit of the energy range can be lowered to about 2.2 eV (at 10 K). We propose that these structures could be used in entirely lattice-matched semiconductor lasers operating at room temperature in the blue, green, and yellow regions. Because of the absence of strain, these materials are expected to be less prone to degradation than the current blue-green lasers grown on GaAs.

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