<i>In situ</i> relaxed Si1−xGex epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates

Yang, Zhan-Wei; Alperin, J.; Wang, W. I.; Iyer, Subu; Kuan, T. S.; Semendy, Fred

doi:10.1116/1.589972

Cited by 45 publications

(23 citation statements)

References 15 publications

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“…Image forces due to the presence of a low elastic modulus glass layer can draw threading dislocations, which would otherwise propagate up through the growing film, down through the template towards the bonded interface. 5,6 It has also been proposed that the bonded interface acts as a sink for contaminants that would otherwise result in the nucleation of dislocations in the film. 14 The observed changes in the strain distribution and film morphology could be due to both elastically and plastically compliant behaviors of the substrate for films grown well beyond their critical thickness.…”

Section: ͑1͒mentioning

confidence: 99%

“…We believe these results also apply to other materials systems reporting compliant behavior in the literature. 5,18 This work is supported by the MURI program on compliant substrates under the Office of Naval Research ͑C. Wood͒.…”

Section: ͑1͒mentioning

confidence: 99%

“…Transmission electron microscopy observations have demonstrated a reduced dislocation density of films grown to many times their Matthews-Blakeslee 2 critical thickness h c on glass-bonded compliant substrates. [3][4][5] High-resolution x-ray diffraction ͑HRXD͒ measurements and atomic-force microscopy characterization were carried out on thick ͑3 m͒, highly mismatched ͑3%͒ In 0.45 Ga 0.55 As films grown simultaneously on conventional and the compliant substrates that are the focus of the present study. These measurements demonstrated a ϳ2ϫ reduction in the breadth of the film's strain distribution as determined by triplecrystal diffraction peak widths that decreased from 270Љ on a conventional substrate to 155Љ on the glass-bonded substrate.…”

mentioning

confidence: 99%

“…1,[3][4][5] Compliant substrates consist of a thin ͑ϳ10 nm͒ ''template'' layer bonded to a thicker ''handle'' wafer by means of an intermediary glass layer in these studies. Transmission electron microscopy observations have demonstrated a reduced dislocation density of films grown to many times their Matthews-Blakeslee 2 critical thickness h c on glass-bonded compliant substrates.…”

mentioning

confidence: 99%

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Experimental test for elastic compliance during growth on glass-bonded compliant substrates

Moran

Hansen

Matyi

et al. 2000

Applied Physics Letters

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Highly mismatched films (In 0.44 Ga 0.56 As, 3% mismatch͒ grown well beyond their critical thickness ͑to 3 m͒ on GaAs glass-bonded compliant substrates exhibit surfaces four times smoother and strain distributions twice as narrow as films grown simultaneously on conventional GaAs substrates. The compliant substrates consist of a thin ͑ϳ10 nm͒ GaAs template layer bonded via a borosilicate glass to a mechanical handle wafer. The improvement of highly mismatched films grown well beyond their critical thickness on compliant substrate structures is commonly modeled in terms of an elastic partitioning of strain from the film to the thin ͑ϳ10 nm͒ single-crystal template layer. The present study is a direct test for this mechanism of elastic compliance. A comparison is reported of the strain in 92 nm In 0.09 Ga 0.91 As films and 76 nm In 0.03 Ga 0.97 As films grown simultaneously on conventional GaAs substrates and the compliant substrates responsible for the improved structural quality of In 0.44 Ga 0.56 As films. Elastic partitioning of strain from the mismatched film to the 10 nm template layer prior to the onset of misfit dislocations is not observed for films grown on these glass-bonded compliant substrates. © 2000 American Institute of Physics. ͓S0003-6951͑00͒03318-0͔Modification of the relaxation behavior in latticemismatched films due to growth on a glass-bonded compliant substrate is well documented. 1,3-5 Compliant substrates consist of a thin ͑ϳ10 nm͒ ''template'' layer bonded to a thicker ''handle'' wafer by means of an intermediary glass layer in these studies. Transmission electron microscopy observations have demonstrated a reduced dislocation density of films grown to many times their Matthews-Blakeslee 2 critical thickness h c on glass-bonded compliant substrates. [3][4][5] High-resolution x-ray diffraction ͑HRXD͒ measurements and atomic-force microscopy characterization were carried out on thick ͑3 m͒, highly mismatched ͑3%͒ In 0.45 Ga 0.55 As films grown simultaneously on conventional and the compliant substrates that are the focus of the present study. These measurements demonstrated a ϳ2ϫ reduction in the breadth of the film's strain distribution as determined by triplecrystal diffraction peak widths that decreased from 270Љ on a conventional substrate to 155Љ on the glass-bonded substrate. In addition, there was a ϳ4ϫ decrease in the rms roughness of the films from 42 nm rms on a conventional substrate to 10 nm rms on the glass-bonded substrate. 1 These improvements in the structural quality of the thick, highly mismatched, relaxed films on the glass-bonded substrates occurred for a range in glass viscosity of over five orders of magnitude.A specific mechanism responsible for the changes in relaxation behavior of a mismatched film grown on a glassbonded compliant substrate is uncertain at present and could be specific to the materials system. The present work is a test for a specific mechanism of compliance in substrates fabricated using a materials system that has been shown to modify the relaxati...

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Section: ͑1͒mentioning

confidence: 99%

Section: ͑1͒mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Experimental test for elastic compliance during growth on glass-bonded compliant substrates

Moran

Hansen

Matyi

et al. 2000

Applied Physics Letters

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“…Two approaches to fabricating macroscopic compliant substrates have predominated. The first utilized a metal 7 or glass [8][9][10][11] media to join the template and handle. The second approach employed twist-bonded ͑TB͒ substrates, 12,13 in which the template was directly bonded to the handle with an intentional azimuthal angular misorientation .…”

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confidence: 99%

InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

Moran

Hansen

Matyi

et al. 1999

Applied Physics Letters

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In 0.44 Ga 0.56 As ͑3% mismatch͒ films 3 m thick were grown simultaneously on a conventional GaAs substrate, glass-bonded GaAs compliant substrates employing glasses of different viscosity, and a twist-bonded GaAs compliant substrate. High-resolution triple-crystal x-ray diffraction measurements of the breadth of the strain distribution in the films and atomic force microscopy measurements of the film's surface morphology were performed. The films grown on the glass-bonded compliant substrates exhibited a strain distribution whose breadth was narrowed by almost a factor of 2 and a surface roughness that decreased by a factor of 4 compared to the film simultaneously grown on the conventional substrate. These improvements in the film's structural quality were observed to be independent of the viscosity of the glass-bonding media over the range of viscosity investigated and were not observed to occur for the film grown on the twist-bonded substrate. © 1999 American Institute of Physics. ͓S0003-6951͑99͒01637-X͔ Limits on the structural quality of an epitaxial film which is lattice mismatched to the substrate precludes many potential device applications of heteroepitaxial semiconductor structures. Thin mismatched films retain a pseudomorphic strain so as to match the lattice constant of the much thicker substrate in the plane of the interface. Relaxation of a mismatched film grown beyond some critical thickness, 1 h c , which decreases with increasing mismatch, occurs at the expense of the film's structural quality. The film is eventually fully relaxed to its bulk lattice constant as it is grown beyond h c through the generation of an increasing number of misfit dislocations at the film/substrate interface and the subsequent propagation of threading dislocations into the film. 2 The concept of a compliant substrate has been proposed as a method for modifying the relaxation behavior of the heterostructure. 3 An ideal compliant substrate consists of a thin ''template'' layer mechanically decoupled from a thicker ''handle'' wafer. Calculations 3-6 of the strain partitioning in such a system predict enhanced relaxation without structural degradation of a mismatched film grown to a thickness well beyond the conventional h c on a template whose thickness is less than or approximately equal to h c .Experimentally realized compliant substrates have not had template layers that are completely decoupled from the handle wafer. Two approaches to fabricating macroscopic compliant substrates have predominated. The first utilized a metal 7 or glass 8-11 media to join the template and handle. The second approach employed twist-bonded ͑TB͒ substrates, 12,13 in which the template was directly bonded to the handle with an intentional azimuthal angular misorientation . The exact influence of the critical template/handle interface on film relaxation is uncertain at present. In glassbonded substrates, the ability of the glass to flow under a shear strain has been proposed as a means to allow strain relaxation. 9,14 This mechanism depends ...

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Substrates for the Epitaxial Growth of MCT

Garland

Sporken

2010

Mercury Cadmium Telluride

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In situ relaxed Si1−xGex epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates

Abstract: Articles you may be interested inReduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain-relaxation procedure Appl.

Cited by 45 publications

References 15 publications

Experimental test for elastic compliance during growth on glass-bonded compliant substrates

Experimental test for elastic compliance during growth on glass-bonded compliant substrates

InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

Substrates for the Epitaxial Growth of MCT

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