Germanium and Germanium-On-Insulator (GeOI) MOSFETs with high-k gate dielectrics have received recent attention for the advanced technology nodes, because of the better carrier transport properties in Ge compared to Si. For Ge or GeOI CMOS, it is mandatory to determine Ge dedicated resist stripping processes, because of the Germanium non-compatibility with actual cleaning solutions. An initial compatibility study shows a passivation effect on germanium during dry step for high N2/ (O2+N2) plasma ratio. For the post active area etching, dry stripping performed on patterned Poly-Ge-On-Insulator (PolyGeOI) wafers shows good compatibility. The lateral Ge consumption due to the water rinse step is minimized by dry process, indicating a plasma passivation effect. Post implant stripping is especially difficult because the Si typical solutions are highly aggressive for Ge, and also because of the resist graphitization. Using a ramping temperature process, a good resist removal efficiency has been achieved.

Microelectronic technology developments have been widely used today in MEMS or BIO (1) technologies. Plasma etching was developed more than 30 years ago and commonly used in microelectronic device processing (2). Although MEMS and BIO realizations were also based on this microelectronics standard processing method. But some process developments or sustaining were needed to achieve the high topography of such devices. We have especially developed for sub-micro and nano high topography devices application a silicon etching process based on dry plasma technology. A performed recipe allowed us to fabricate structure similar as these commonly used in MEMS and BIO devices without trenching effect and residual spacer. Silicon etched thickness of 800 shown vertical edge profile compatible with such applications.

To pursue the device capability improvement, new materials have to be introduced in the gate stack. TiN metal gate on HfO2 is one of the solutions to replace existing gate. Thus, manufacturing processes, such as resist stripping, have to be adapted to these new materials as current processes can not be compatible. HfO2 compatibility was first studied by ellipsometry and ATR measurements, showing that Downstream type plasma (DS) with He-H2 or H2-N2 gas mix for dry processes, and Hydrozone ™ (HZ) for wet processes were fully compatible. Then TiN compatibility was investigated by WDXRF and XPS. Results indicate that the same processes as for HfO2 are compatible with TiN. Finally, effectiveness study proved that DS He-H2 or H2-N2 plasmas were similar to O2 plasma. To fully remove the polymers, HZ processes or derivatives have to be performed after plasmas.