The main purpose of this paper was to analyze how the doping content of Ga2O3 effect the Gallium doped zinc oxide (GZO) targets. GZO targets were prepared by air sintering. The density, sheet resistance, bending strength and Vickers hardness were measured. The morphologies and microstructures were characterized by XRD and SEM. The results showed that GZO target with Ga2O3 content of 1wt% showed the best properties which corresponded to the highest relative density and bending strength of 99.2 % and 91.79MPa respectively, and the lowest sheet resistance of 7.36Ω/. While the Ga2O3 content was higher (2 wt% or 3 wt %), the second phase came out.

The WO3 film was prepared by dip coating method with WCl6 as the soure of tungsten and P123 as the structure-directing agent. The crystalline phase and microstructure of the film were characterized through XRD and TEM techniques, respectively. It was found the film annealed at 300°C for 4h mainly was amorphous WO3 with a little monoclinic WO3. The TEM micrographs revealed the film was partly ordered mesoporous and the mean pore diameter was about 5nm. The measurements of the cyclic voltammetry suggested that the WO3 film had a good electrochromic reversibility performance. The ratio of amount of charge intercalated and amount of charge deintercalated during the cyclic voltammetry, was over 99%. The film possessed a very short respond time which was only about 3.1s.

In this research, powders of Y2Mo3O12 and Yb2Mo3O12 were successfully synthesized by liquid phase coprecipitation, followed with a heat treatment at 750°C for 6h. X-ray diffraction (XRD) analysis indicated that the Y2Mo3O12 and Yb2Mo3O12 were single orthorhombic structure with the space group of Pbcn. Negative thermal expansion properties of Y2Mo3O12 and Yb2Mo3O12 were studied with high temperature XRD analysis. The thermal expansion coefficients of Y2Mo3O12 and Yb2Mo3O12 were calculated to be -5.943×10-6K-1 and -6.237×10-6K-1 respectively.

Nb doped ZnO (NZO) ceramic targets were prepared by sintering in air for 3 hours. The morphologies, structure, densification behavior, mechanical and electrical properties of the sintered ceramic targets with different doping concentrations were investigated. The optimal doping concentration was obtained. The results indicated that the sintered NZO ceramic targets with doping amount of 1wt.% (1wt% Nb2O5) had optimum comprehensive properties, which was corresponding to an electrical resistivity of 1.87×10-2Ω·cm, a relative density of 99.1%, a Vickers hardness of 320MPa and a bending strength of 72.8MPa. The NZO ceramic target has a potential to be used as a high-quality sputtering target to deposit ZnO-based transparent conductive films.

This paper deals with the preparation of zinc oxide doped tungsten oxide target by sintering in oxygenated flow atmosphere. The effect of the composition and the sintering conditions on the properties and microstructures of the targets has been studied. The optimal sintering conditions were found. The sintered zinc doped tungsten oxide ceramic target can achieve a relative density of 99.58%, a bending strength of 31.79MPa and a Vickers hardness of 349MPa.