No abstract

In this paper, a terahertz metamaterial structure with multiple physical features such as EIT-like resonance, Fano resonance, and terahertz wave absorption, is implemented. The device consists of a metal structure and a GaAs layer. The conductivity of GaAs can be adjusted by optical pump. When the conductivity of GaAs is 10 S/m, with the TE polarization wave incenting, the Fano resonance formed, and when the TM polarization wave was incenting, the EIT-like resonance formed. Modulation of the resonance can be achieved by adjusting the conductivity of GaAs, and a maximum modulation depth of 96.5% is obtained. When the conductivity of GaAs is 2 × 105 S/m, a double narrow-band absorption is obtained with TM polarization wave exciting. The maximum sensitivity reaches 513 GHz/RIU and the maximum FOM value reaches 39.5, which indicates that the device has excellent performance in refractive index sensing. The device also has a wide range of applications in terahertz sensors, slow-light devices, and terahertz modulators.

No abstract

Terahertz logic gates play a vital role in optical signal processing and terahertz digitization. Herein, a strategy to design an all-optical terahertz logic gate device composed of metamaterials with a semiconductor-metal hybrid is proposed; accordingly, a concrete logic gate composed of Ge embedded-in Au stripe supported by a Si board is presented theoretically. Simulation results reveal the dependence of the terahertz transmission spectra on the different illuminations in the device. Based on the illumination-transmission response, the designed device can realize the NOR or OR Boolean operation. The effects of the width of the Ge-Au stripe as well as the Si board on the transmission spectra and logic performance were also investigated.

This letter presents a fabricated Dirac point modulator of a graphene-based terahertz electromagnetically induced transparency (EIT)-like metasurface (GrE & MS). Dynamic modulation is realized by applying three stimulus modes of optical pump, bias voltage, and optical pump–bias voltage combination. With increasing luminous flux or bias voltage, the transmission amplitude undergoes two stages: increasing and decreasing, because the graphene Fermi level shifts between the valence band, Dirac point, and conduction band. Thus, an approximate position of the Dirac point can be evaluated by the transmission spectrum fluctuation. The maximum modulation depth is measured to be 182% under 1 V. These findings provide a method for designing ultrasensitive terahertz modulation devices.