In this work, the anisotropic photoresponse and the effects of defects on the anisotropic response based on layered SnS near infrared photodetectors were investigated.

A new strategy to accelerate conversion of PbI2 to perovskite and improve solar cell performance via a solvent coordination and anti-solvent extraction process.

One of the most important topics in spintronics is spin transport. In this work, spin transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructure were studied by helicity-dependent photocurrent measurements at room temperature. Spin-related photocurrent was detected under normal incidence of a circularly polarized laser with a Gaussian distribution. On one hand, spin polarized electrons excited by the laser generate a diffusive spin polarization current, which leads to a vortex charge current as a result of anomalous circular photogalvanic effect. On the other hand, photo-induced spin polarized electrons driven by a longitudinal electric field give rise to a transverse current via anomalous Hall Effect. Both of these effects originated from the Rashba spin-orbit coupling. By analyzing spin-related photocurrent varied with laser position, the contributions of the two effects were differentiated and the ratio of the spin diffusion coefficient to photo-induced anomalous spin Hall mobility Ds/μs = 0.08 V was extracted at room temperature.

Swirly photocurrent in InN films arising from reciprocal spin Hall effect (RSHE) is observed under normal incidence of circularly polarized light at room temperature. It is found that the swirly current is a superposition of the RSHE currents from the surface and bulk layer of InN. The effective spin-orbit coupling coefficient (SOC) in the surface electron layer is suggested to be of opposite sign to that in the bulk. The results constitute a comprehensive understanding of the role of surface electron layer in spin transport in InN. This work reveals an approach to explore spin-orbit coupling in systems like InN.