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So far, most of the defects at system level are assembly related. This trend obviously concerns Systems in Package, Stacked dies, Packages on Package devices, passive integration, integration of logic, power, wireless, analog, sensor and actuator in the same packaged device… All these Systems in Package defy our failure localization tools. For the first time, we have to face non transparent material, massive 3D structure with mandatory long working distance and need of relatively high spatial resolution. Magnetic microscopy has the ability do this as long as we are able to adapt its principle to the mandatory 3D sensitivity and resolution. We have developed a global 3D approach based on simulation in order to target µm resolution at long working distance.

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With the innovations in packaging technologies which have taken place over the last decade, new assemblies often include an increasing number of dies inside a single package. This is exactly what was predicted by the More than Moore’s paradigm: as the integration of ICs increases, the heterogeneity of the devices found in a single package increases. As a result, the number of potential failures which can appear at assembly level has increased exponentially. At present, no technique has been able to precisely localize defects which are deep inside a complex package. For this reason, a new technique for failure localization for three-dimensional structures is needed. In this paper the technique proposed, based on the coupling of magnetic measurements and simulations, is applied to a three-dimensional structure to precisely localize the current path which is buried deep inside it. A new method, based on parameters fittings of magnetic simulations, is then applied in order to accurately evaluate the distance between the current and the sensor.