Facing more than moore, is magnetic microscopy the new Swiss knife for 3D defect localization in SiP?

Abstract

So far, most of the defects at system level are assembly related. This trend obviously concerns Systems in Package, Stacked dies, Packages on Package devices, passive integration, integration of logic, power, wireless, analog, sensor and actuator in the same packaged device… All these Systems in Package defy our failure localization tools. For the first time, we have to face non transparent material, massive 3D structure with mandatory long working distance and need of relatively high spatial resolution. Magnetic microscopy has the ability do this as long as we are able to adapt its principle to the mandatory 3D sensitivity and resolution. We have developed a global 3D approach based on simulation in order to target µm resolution at long working distance.

3D current path in stacked devices: Metrics and challenges

“…A simulation approach [5][6][7][8] has been used in complementary with MCI for failure localization in integrated circuits (ICs) and 3D devices. This approach uses an iterative algorithm; the current path is built segment by segment.…”

“…Correlation calculation for (a) one line with reconstruction line by line and (b) layer by layer, starting from the bottom to the top layer[6] …”