No abstract

In this paper, we fabricated Pt/tantalum oxide (Ta 2 O 5 ) Schottky diodes for hydrogen sensing applications. Thin (4 nm) layer of Ta 2 O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates by radio frequency (RF) sputtering technique. We compared the performance of these sensors at different elevated temperatures of 100°C and 150°C. At these temperatures, the sensor based on SiC exhibited a larger sensitivity while the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the responses exhibited by the Pt/Ta 2 O 5 based Schottky diodes demonstrated a promising potential for hydrogen sensing applications.