2011
DOI: 10.1016/j.sna.2011.02.021
|View full text |Cite
|
Sign up to set email alerts
|

Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
5
0

Year Published

2012
2012
2023
2023

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 27 publications
(5 citation statements)
references
References 29 publications
0
5
0
Order By: Relevance
“…Similarly, Figure 5b shows the high‐resolution XPS spectra of Ta 4f wherein the de‐convoluted peaks represent the binding energies of 26.2 eV and 27.2 eV which correspond to Ta 4f7/2 and Ta 4f5/2 respectively. These values suggest that the Ta is in +5 oxidation state in the composite [59–62] . Further, the asymmetric O1s spectra of pure SnO 2 and 5 wt% TaSn nanocomposite material are given in Figure 5c and Figure 5d respectively.…”
Section: Resultsmentioning
confidence: 79%
See 1 more Smart Citation
“…Similarly, Figure 5b shows the high‐resolution XPS spectra of Ta 4f wherein the de‐convoluted peaks represent the binding energies of 26.2 eV and 27.2 eV which correspond to Ta 4f7/2 and Ta 4f5/2 respectively. These values suggest that the Ta is in +5 oxidation state in the composite [59–62] . Further, the asymmetric O1s spectra of pure SnO 2 and 5 wt% TaSn nanocomposite material are given in Figure 5c and Figure 5d respectively.…”
Section: Resultsmentioning
confidence: 79%
“…These values suggest that the Ta is in + 5 oxidation state in the composite. [59][60][61][62] Further, the asymmetric O1s spectra of pure SnO 2 and 5 wt% TaSn nanocomposite material are given in Figure 5c and Figure 5d respectively. The O1s spectra of both the samples display the different types of oxygen species available in the material.…”
Section: Surface Composition Analysismentioning
confidence: 99%
“…A theoretical study showed an efficiency of 12% [31], though a much low practical efficiency of E FF =1.8% was obtained due to imperfection of the materials and the M/S interface. Schottky barrier type diodes were also fabricated on some other MO semiconductors such as Ta 2 O 5 and ZnO using Pt as the metal electrode though no PV effect was investigated [32,33].…”
Section: Momentioning
confidence: 99%
“…Among them, Ta 2 O 5 is one of the favorable materials for DUV detectors owing to its wide bandgap of 4.6 eV, excellent dielectric properties, and non-corrosive nature making it suitable for coating. [18][19][20] These properties make Ta 2 O 5 a promising material for various applications, including optical coatings, [21] dielectric layers in electronic devices, [22] and gas sensors, [23] humidity sensors, [24] bio sensors, [25,26] and specially photocatalysis. [27] However, DUV sensors utilizing Ta 2 O 5 as the sensing material have not been extensively studied due to challenges in depositing the material, low carrier concentration resulting in reduced sensitivity, difficulties in measurement, and low photocurrent response.…”
Section: Introductionmentioning
confidence: 99%