Numerous applications, e.g., systems for chemical analysis by optical absorption and emission line characterization, will benefit from the availability of low-cost single-chip spectrometers. A single-chip CMOS optical microspectrometer containing an array of 16 Ž. addressable Fabry-Perot etalons each one with different resonance cavity length , photodetectors and circuits for read-out, multiplexing Ž and driving a serial bus interface has been fabricated. The result is a chip that can operate using only four external connections including. V and V covering the visible spectral range of the spectrum with FWHMs 18 nm. Frequency output and serial bus interface allow dd ss easy multi-sensor, multi-chip interfacing using a microcontroller or a personal computer. Power consumption is 1250 mW for a clock frequency of 1 MHz.
This paper reports on the IC-compatible fabrication of vertically tapered optical layers for use in linear variable optical filters (LVOF). The taper angle is fully defined by a mask design. Only one masked lithography step is required for defining strips in a photoresist with trenches etched therein of a density varying along the length of the strip. In a subsequent reflow, this patterned photoresist is planarized, resulting in a strip with a local thickness defined by the initial layer thickness and the trench density at that position before reflow. Hence a taper can be flexibly programmed by the mask design to be from 0.001• to 0.1 • , which enables the simultaneous fabrication of tapered layers of different taper angles. The 3D pattern of resist structures is subsequently transferred into Si or SiO 2 by appropriate etching. Complete LVOF fabrication involves CMOS-compatible deposition of a lower dielectric mirror using a stack of dielectrics on the wafer, tapered layer formation and deposition of the top dielectric mirror. Design principle, processing and simulation results plus experimental validation of the technique on the profile in the resist and after transfer of the taper into Si and SiO 2 are presented.
The spectral resolution of a MEMS-based IR microspectrometer critically depends on the thermal cross-talk between adjacent TE elements in the detector array. Thermal isolation between elements is realized by using bulk micromachining directly following CMOS processing. This paper reports on the characterization results of bridge-shaped TE detector elements that are cut out of a membrane. Elements with dimensions of 650 × 36 μm 2 are separated by 10 μm wide gaps in order to minimize the thermal cross-talk by heat conduction through the support structure. The static and dynamic aspects of thermal cross-talk have been evaluated with an emphasis on the effect of the thermal conductivity of air as a function of the package pressure.
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