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It is shown, using the example of InAs/InAsSb/InAsSbP heterostructures, that the formation of a curvilinear reflecting surface consisting of hemispherical etch pits on the rear side of a photodiode chip leads to an increase in the quantum efficiency of photodiodes by a factor of 1.5-1.7 in the entire mid IR wave length interval studied (λ = 3-5 μm). For the obtained photodiodes with a cutoff wavelength of 4.8 μm, a photosensitive area of 0.1 mm 2 , and a chip area of 0.9 mm 2 , a monochromatic responsivity at λ = 4.0 μm reached 0.6 A/W, while a dark current at a reverse bias voltage of 0.2 V was within 4-6 A/cm 2 .

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The paper considers the uncooled photodetectors based on GaInAsSb/GaAlAsSb heterostructures, which can be applied in precision diode laser spectroscopy. The spectral sensitivity range of photodetectors with a photosensitive area diameter of 1.0 mm and 2.0 mm is 1.0-2.4 μm. The current monochromatic sensitivity at the wavelength of 2.1 μm has a value of 1.0 A/W without bias. The capacity reaches 375 pF with a photosensitive area diameter of 1.0 mm and 800-5000 pF with 2 mm. The modern gas analyzers based on diode lasers and developed photodetectors for medical screening diagnostics by analyzing the gas compositions of exhaled air, for control of impurity gases in the process of rectification of inorganic hydrides, control of methane leaks in gas pipelines, as well as for registration of exhaust gases of a moving car are presented. Keywords: photodetector, heterostructure, diode laser spectroscopy, gas analyzer.

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