Oxide dispersion strengthened (ODS) ferritic steels typically contain a fine dispersion of nanoscopic Y(Al, Ti) oxides, leading to an improvement in mechanical and physical properties. A rapid prototyping technique, selective laser melting (SLM), was successfully applied to consolidate as-mechanically alloyed ODS-PM2000 (Fe-19Cr-5.5Al-0.5Ti-0.5Y 2 O 3 ; all wt.%) powder to fabricate solid and thin-walled builds of different thickness. This work is intended to act as a first study to investigate the tensile response of such configurations at room temperature, using miniaturized test specimens along and perpendicular to the growth direction. The 0.2% offset yield strength of as-grown wall builds was inferior to conventional PM2000 alloy (recrystallized), but could be significantly increased by conducting post-build heat treatments. Young's modulus and yield strength showed anisotropy and were enhanced when testing perpendicular to the build growth direction. Electron backscatter diffraction revealed a strong [0 0 1] fibre texture along the growth direction, which explains the anisotropic behaviour. Additionally, studies on the morphology of the individual fracture surfaces, the grain structure of the cross-section near this region and the size distribution of ODS particles in such builds were conducted. A fine dispersion of precipitates was retained in all SLM builds, and findings suggest that a certain amount of Y is probably still in atomic solution in the as-grown condition and forms new small nanoscopic dispersoids during annealing, which lead to enhanced strengthening.

Transparent conducting oxides (TCOs), with high optical transparency (≥85%) and low electrical resistivity (10−4 Ω·cm) are used in a wide variety of commercial devices. There is growing interest in replacing conventional TCOs such as indium tin oxide with lower cost, earth abundant materials. In the current study, we dope Zr into thin ZnO films grown by atomic layer deposition (ALD) to target properties of an efficient TCO. The effects of doping (0–10 at.% Zr) were investigated for ~100 nm thick films and the effect of thickness on the properties was investigated for 50–250 nm thick films. The addition of Zr4+ ions acting as electron donors showed reduced resistivity (1.44 × 10−3 Ω·cm), increased carrier density (3.81 × 1020 cm−3), and increased optical gap (3.5 eV) with 4.8 at.% doping. The increase of film thickness to 250 nm reduced the electron carrier/photon scattering leading to a further reduction of resistivity to 7.5 × 10−4 Ω·cm and an average optical transparency in the visible/near infrared (IR) range up to 91%. The improved n-type properties of ZnO: Zr films are promising for TCO applications after reaching the targets for high carrier density (>1020 cm−3), low resistivity in the order of 10−4 Ω·cm and high optical transparency (≥85%).

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Single-crystal electron diffraction patterns were obtained from SF 6 crystals condensed in an environmental cell in a 200 kV transmission electron microscope. Between 50 + 5 K and 94 K the lattice was found to be hexagonal, with a = 8.01 (12) and c = 4.83 (7).A. Consideration of the packing of SF 6 molecules shows that this phase is isostructural with UCl6, having space group P3ml with Z = 3. At lower temperatures (T < 50 +_ 5 K) this structure was found to distort slightly to a C face-centred monoclinic (or conceivably even lower symmetry) lattice with a = 8.01 (12), b = 13.9(2), c = 4.83 (7)/~ and fl = 92.5 (5) ° with Z = 6. These observations are correlated with previous NMR and Raman-scattering results.

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