The localization of the key photoreductive and oxidative processes and some stress-protective reactions within leaves of mesophytic C(3) plants were investigated. The role of light in determining the profile of Rubisco, glutamate oxaloacetate transaminase, catalase, fumarase, and cytochrome-c-oxidase across spinach leaves was examined by exposing leaves to illumination on either the adaxial or abaxial leaf surfaces. Oxygen evolution in fresh paradermal leaf sections and CO(2) gas exchange in whole leaves under adaxial or abaxial illumination was also examined. The results showed that the palisade mesophyll is responsible for the midday depression of photosynthesis in spinach leaves. The photosynthetic apparatus was more sensitive to the light environment than the respiratory apparatus. Additionally, examination of the paradermal leaf sections by optical microscopy allowed us to describe two new types of parenchyma in spinach-pirum mesophyll and pillow spongy mesophyll. A hypothesis that oxaloacetate may protect the upper leaf tissue from the destructive influence of active oxygen is presented. The application of mathematical modeling shows that the pattern of enzymatic distribution across leaves abides by the principle of maximal ecological utility. Light regulation of carbon metabolism across leaves is discussed.

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The results of the computational-experimental investigations of high frequency and noise prop erties of SOI MOS transistors and passive elements of 0.35 µm domestic digital CMOS SOI technology are presented. New elements absent in the library composition and necessary to construct the monolithic micro wave functional blocks are constructed. The results of design and experimental investigations of the crystals of generating, amplifying, and mixing functional units with operational frequencies of 1.2-1.65 GHz are pre sented. Based on the results of analysis of the computational-experimental simulation, the possibility in principle to design the monolithic LSI of the radio receiver of satellite navigation based on the domestic CMOS SOI technology with frequencies of 1.2-1.6 GHz and hardness levels up to 10 12 unit/s and 10 6 units is confirmed.