No abstract

No abstract

The growth rate of an epitaxial silicon deposit affects the stacking-fault density of the deposited layer in a linear manner over the deposition range of 0.1 to 1.0 μ/min. The stacking-fault density is also inversely related to the substrate dislocation density for dislocation densities up to 5×103 cm−2. The conditions for the formation of stacking faults, as described by various authors to date, seem sufficient but not necessary for fault formation. The present work supports a vacancy condensation mechanism by which the low stacking-fault energy of the material creates a natural condensation of vacancies into stacking faults.

AIR LIQUIDE : CRCD 78350 Jouy en Josas -France I. AbstractFor the past several years, tin-lead has been the most commonly used circuit board finish, mainly because of its high solderability. But as the current evolutions in Electronics are pushing toward more and more stringent demands in terms of quality, miniaturization, costs and environmental legislation compliance, the Assembly industry must find an alternative to those circuit board finishes.

No abstract