Using weak beam electron microscopy the stacking fault energy (SFE) of III‐V compounds is determined by measuring the dissociation width of edge dislocations. The SFE corrected for the lattice parameters is given in meV/atom for GaAs, GaP, GaSb, InAs, InP, and InSb. As expected there is a strong correlation of the SFE with the ionicity of the bond. The different plasticity of the compounds is traced back to different dislocation velocities.
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